PART |
Description |
Maker |
SST27SF512-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
64K X 8 FLASH 12V PROM, 70 ns, PQCC32 128K X 8 FLASH 12V PROM, 70 ns, PDIP28 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
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SILICON STORAGE TECHNOLOGY INC
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W29EE512P-70B W29EE512Q-70B W29EE512Q-90 W29EE512P |
BOX 2.53X1.73X.65 W/3 BTNS ALMOND 64K X 8 CMOS FLASH MEMORY 64K X 8 FLASH 5V PROM, 90 ns, PDSO32 64K X 8 CMOS FLASH MEMORY 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
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Winbond Electronics Corp Winbond Electronics, Corp.
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AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70 Divide-By-Twelve Decade Counter 14-SOIC 0 to 70 Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85 Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85 4-Bit Binary Counters 14-SO 0 to 70 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85 Hex Inverters 14-SSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-TVSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SO -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32 Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
|
Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC
|
CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 Bulk Erase Flash Memory, 1Mb 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http:// CATALYST[Catalyst Semiconductor] ON SEMICONDUCTOR
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SST39SF010-90-4C-NH SST39SF010-90-4C-PH SST39SF512 |
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 5V PROM, 90 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 5V PROM, 70 ns, PDSO32 128K X 8 FLASH 5V PROM, 90 ns, UUC
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
CAT28F010GI-12TE13 CAT28F010T14I-90TE13 |
128K X 8 FLASH 12V PROM, 120 ns, PQCC32 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON SEMICONDUCTOR
|
S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc. SPANSION LLC
|
W29F102P-50 W29F102P-50B W29F102Q-45 W29F102Q-45B |
64K 16 CMOS FLASH MEMORY 64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PQCC44 64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 55 ns, PQCC44 64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 50 ns, PDSO40 64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PDSO40
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Winbond Electronics Corp Winbond Electronics, Corp.
|
SST29SF010-55-4I-NHE SST29SF010-55-4C-WHE SST29SF0 |
128K X 8 FLASH 5V PROM, 55 ns, PQCC32 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 64K X 8 FLASH 5V PROM, 55 ns, PQCC32 64K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
AT49BV512-90TU |
512K, 3V FLASH, TSOP, IND TEMP, GREEN(FLASH) 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
|
Atmel, Corp.
|
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